High flat gain low noise neural signal recording amplifier

S. Mythry, D. Moni
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引用次数: 3

Abstract

The ultra low power and low noise neural amplifiers amplifies millihertz to kilohertz amplitude biosignals while rebuffing the direct current offsets has created a great demand amongst neuroscience researchers and clinicians. This paper presents a high flat gain neural amplifier design along with literature survey on the recent trends on neural amplifiers used for neuro recording applications. Various ultra low power techniques used to reject dc offsets and noise suppression are mainly focused as the part of the survey for designing nerve amplifiers. A 71dB flat gain nerve signal amplifier, almost few nV/sqrt(Hz) to 2.16μV/VHz noise and 385nW (FCM)–2.6pW (SCM) is designed and simulated using 90nm CMOS technology process. The capacitive — shorted gate-source pseudo resistive feedback technique is used in designing 1V powered neural amplifier. The CMRR is obtained as 76dB and PSRR is above 90dB.
高平增益低噪声神经信号记录放大器
超低功率和低噪声的神经放大器放大毫赫到千赫兹的幅度生物信号,同时拒绝直流偏移,在神经科学研究人员和临床医生中创造了巨大的需求。本文介绍了一种高平增益神经放大器的设计,并对用于神经记录的神经放大器的最新发展趋势进行了文献综述。本文重点介绍了各种用于抑制直流偏置和噪声抑制的超低功耗技术,作为设计神经放大器的调查研究的一部分。采用90nm CMOS工艺设计并仿真了一种增益为71dB、噪声几乎小于nV/sqrt(Hz) ~ 2.16μV/VHz、功率为385nW (FCM) ~ 2.6 pw (SCM)的平坦神经信号放大器。采用容性短路门源伪阻性反馈技术设计了1V功率的神经放大器。CMRR为76dB, PSRR为90dB以上。
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