Impact of an air barrier on the electron states of etch-released quantum heterostructures

J. D. Makowski, M. Saarinen, C. Palmstrøm, J. Talghader
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引用次数: 2

Abstract

This work investigates the effect of the quantum well interface on the photoluminescence (PL) spectrum. The samples consist of an MBE (molecular beam epitaxy) grown InP/InGaAs heterostructure with two sets of a multiquantum well structure (MQW) and a single quantum well (SQW) symmetrically placed around a sacrificial layer. All are attached to a common anchor where the heterostructure is still in its pristine state; only the bottom heterostructure is present in the exposed well region next to the cantilevers. The transfer matrix method yields transition wavelengths for the SQW in the unprocessed buried case and exposed case. The electron states in the MQW structure form a mini band at the top of the quantum well and are not affected by the nature of the interface.
空气屏障对蚀刻释放量子异质结构电子态的影响
本文研究了量子阱界面对光致发光(PL)光谱的影响。样品由生长在InP/InGaAs异质结构中的MBE(分子束外延)组成,并在牺牲层周围对称放置两组多量子阱结构(MQW)和单量子阱(SQW)。所有这些都附着在一个共同的锚点上,异质结构仍然处于原始状态;只有底部异质结构存在于靠近悬臂梁的暴露井区。传递矩阵法可得到未处理的埋藏情况和暴露情况下SQW的过渡波长。MQW结构中的电子态在量子阱的顶部形成一个小带,并且不受界面性质的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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