Degradation of the characteristics of p/sup +/ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing

Abstract

Summary form only given. Wet oxides annealed in NO ambient for two different temperatures and degradation due to post N/sub 2/ annealing on the characteristics of p/sup +/ poly MOS capacitors have been investigated. Results show that samples with N/sub 2/ post annealing at 900/spl deg/C have a large increase in leakage current and charge trapping compared with samples without N/sub 2/ post annealing. Although NO annealing improves the SiO/sub 2/-Si interface, post annealing in N/sub 2/ at a high temperature of 900/spl deg/C for 30 minutes may diffuse boron from the p/sup +/ poly to the gate oxide, and hence degrades the characteristics of p/sup +/ poly Si gate oxide.