Reverse-order source/drain formation with double offset spacer (RODOS) for CMOS low-power, high-speed and low-noise amplifiers

Abstract

RODOS (Reverse-Order source/drain formation with Double Offset Spacer) was proposed for low-power, high-speed and low-noise amplifiers. Relying on simulation data, we confirmed the high feasibility of the RODOS process. It showed improved performance in linearity (V/sub IP3/). Additionally, by optimizing process parameters, we achieved small gate delay (CV/I) and low static/dynamic power consumption. The process satisfied most of the requirements of LOP and LSTP in ITRS 2002. Finally, we found that devices with the RODOS structure can be a promising alternative to implement low-power, high-speed and low-noise amplifiers for radio on a chip.