Yasin Khatami, M. Krall, Hong Li, Chuan Xu, K. Banerjee
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引用次数: 14
Abstract
The characteristics of the wide-narrow GNR T-FET were studied. The proposed device utilizes the small bandgap of wide-GNR to achieve high ION and the high bandgap of narrow-GNR to attain low IOFF. The design space for the bandgap/width of the two regions was studied. The design parameters can be optimized to achieve ION as high as 1.3 mA/µm, ION/IOFF ratio as high as 109, and S as small as 10 mV/dec at VDD=0.5 V. Compared to the HP MOSFET with Lg=25 nm [6], the wide-narrow GNR T-FET exhibits 2X and 104X improvement in ION and ION/IOFF ratio at VDD=0.5 V, which makes it suitable for HP/LP applications.
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