1V transimpedance amplifier in 90nm CMOS for medical ultrasound imaging

Linga Reddy Cenkeramaddi, T. Ytterdal
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引用次数: 3

Abstract

In this paper we present the measurement results of a 1V transimpedance amplifier designed in a 90nm CMOS technology as an analog front-end for Capacitive Micro machined Ultrasound Transducers (CMUTs) for medical ultrasound imaging. The proposed amplifier is designed to amplify the signals from 15MHz to 45MHz with a center frequency of 30MHz. The measurements show that the proposed amplifier achieves a voltage gain of 15.5 dB, an output noise power spectral density of 0.0497 (µV)/SQRT(Hz) at a center-frequency of 30 MHz, and a total harmonic distortion of −28.8 dB, at 400mV p-p output voltage at 30 MHz input signal frequency. It draws only 450 µA current from a 1-V power supply. The proposed transimpedance amplifier was fabricated in a 90-nm CMOS technology as it is intended for intravenous medical ultrasound imaging, which demands smaller area for the front-end amplifiers. Area measured to be about 26 µm × 26 µm only per amplifier.
用于医学超声成像的90nm CMOS 1V跨阻放大器
在本文中,我们介绍了一个采用90nm CMOS技术设计的1V跨阻放大器的测量结果,该放大器作为用于医学超声成像的电容式微机械超声换能器(CMUTs)的模拟前端。所提出的放大器设计用于将信号从15MHz放大到45MHz,中心频率为30MHz。测量结果表明,在输入信号频率为30 MHz、输出电压为400mV p-p时,该放大器的电压增益为15.5 dB,中心频率为30 MHz时,输出噪声功率谱密度为0.0497(µV)/SQRT(Hz),总谐波失真为−28.8 dB。它仅从1v电源中吸取450µA电流。该跨阻放大器采用90纳米CMOS工艺制造,适用于静脉内医学超声成像,前端放大器占地面积较小。测量面积约为26 μ m × 26 μ m每个放大器仅。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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