Impact of On-Chip Interconnection in a Large-Scale Memristor Crossbar Array for Neural Network Accelerator and Neuromorphic Chip

Taein Shin, Kyungjune Son, Seongguk Kim, Kyungjun Cho, Shinyoung Park, Subin Kim, Gapyeol Park, Boogyo Sim, Joungho Kim
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引用次数: 5

Abstract

A crossbar array that combines computation and storage functions in non-volatile resistive memory is a promising artificial intelligence (AI) computing architecture. It is because it can largely save a significant energy from interconnection between a processor and a memory. However, the parasitic components from its dense interconnection can affect the electrical performance of noise-sensitive analog-computing and small read voltage margin of the memristor. In this paper, we designed a large-scale memristor crossbar array, and modeled it into equivalent circuit models and analyzed its signal integrity considering IR drop, crosstalk and ripple. These factors were compared depending on the physical dimension of on-chip interconnection and operating frequency. Based on the eye-diagram simulation, we could successfully demonstrate the voltage margin and timing margin for memristor operations.
神经网络加速器和神经形态芯片中大规模忆阻交叉栅阵列片上互连的影响
在非易失性电阻存储器中结合计算和存储功能的交叉棒阵列是一种很有前途的人工智能(AI)计算架构。这是因为它可以在很大程度上节省处理器和存储器之间互连的大量能量。然而,其密集互连产生的寄生元件会影响噪声敏感模拟计算的电性能和忆阻器的小读电压裕度。本文设计了一种大型忆阻交叉棒阵列,将其建模为等效电路模型,并考虑了红外下降、串扰和纹波等因素,对其信号完整性进行了分析。根据片上互连的物理尺寸和工作频率对这些因素进行了比较。基于眼图仿真,我们成功地演示了忆阻器工作的电压裕度和时间裕度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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