Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs

Abstract

We have analyzed the worst-case conditions of hot-carrier induced degradation for high-voltage n- and p-MOSFETs with our model. This model is based on the evaluation of the carrier distribution function along the Si/SiO2 interface, i.e. on thorough consideration of carrier transport. The distribution function obtained by means of a full-band Monte-Carlo device simulator is used to calculate the acceleration integral, which controls how effectively the carriers are breaking Si - H bonds. Therefore, we analyze the worst-case conditions using this integral as a criterion. We compare the simulated picture with the experimental one and conclude that the model fits the experimental data precisely well for both transistor types.