Low loss and small SiP for DC-DC converters

M. Shiraishi, T. Iwasaki, N. Akiyama, T. Kawashima, N. Matsuura, S. Chiba
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引用次数: 20

Abstract

This paper presents a SiP (system in package) that integrates high-side and low-side MOSFETs and a driver IC. The developed SiP has been realized the smallest mount area and lowest loss of DC-DC converter compared with the conventional devices that have ever been reported. Low-inductance packaging technology and optimization of the MOSFETs and driver IC by the MCM method (MCM: mixed simulation of circuit and MOS-power-devices), reduce the mount area by 60% smaller and reduce the loss by 25% compared with conventional discrete devices, when Vin=12 V, Vout=1.3 V, Iout=25 A, f=1 MHz.
低损耗,小SiP用于DC-DC转换器
本文提出了一种集成高侧、低侧mosfet和驱动IC的系统级封装(system in package, SiP),与已有的传统器件相比,实现了最小的安装面积和最低的DC-DC变换器损耗。当Vin=12 V, Vout=1.3 V, Iout=25 A, f=1 MHz时,采用MCM方法对mosfet和驱动IC进行低电感封装技术和优化(MCM:混合模拟电路和mos功率器件),与传统分立器件相比,封装面积减小60%,损耗降低25%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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