A review of plastic-encapsulated-microcircuit reliability-prediction models

Yin-Liong Mok, L. Ten
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引用次数: 2

Abstract

This paper reviews available plastic encapsulated microcircuit (PEM) reliability prediction models including the CNET, Thomson-CSF and RAC model. We examine the RAC (Reliability Analysis Center) model in detail, as it is the only usable model that considers the accelerating effects of temperature and humidity on PEM failures. Our intention is to provide constructive criticisms and propose amendments. We agreed with the assumptions made by the RAC model: types of packaging do not affect PEM failure rate; and a single activation energy of 0.8 eV may be adequate for different IC logic families. However, we feel that the RAC model should incorporate a term for EOS/ESD failures as they constitutes a high percentage (up to 43%) of IC failures. The RAC model should set an upper limit of 130/spl deg/C and 99% RH when using Peck's model to model temperature/humidity acceleration so as to avoid violating physics-of-failure considerations. It should consider treating microprocessor and memories as two different classes of devices due to the vast differences in their reliability as indicated by some literatures. We question if the reliability growth rate can be projected without restrictions. There should also be clearer indications of what constitutes "best commercial practices"-a prerequisite to apply the model.
塑料封装微电路可靠性预测模型综述
本文综述了现有的塑料封装微电路(PEM)可靠性预测模型,包括CNET、Thomson-CSF和RAC模型。我们详细检查了RAC(可靠性分析中心)模型,因为它是唯一考虑温度和湿度对PEM故障加速影响的可用模型。我们的目的是提供建设性的批评并提出修正建议。我们同意RAC模型的假设:包装类型不影响PEM故障率;对于不同的IC逻辑系列,0.8 eV的单一激活能可能是足够的。然而,我们认为RAC模型应该包含EOS/ESD故障的术语,因为它们构成了IC故障的高比例(高达43%)。在使用Peck模型模拟温度/湿度加速度时,RAC模型应设置130/spl℃和99% RH的上限,以避免违反失效物理考虑。由于一些文献表明,微处理器和存储器在可靠性方面存在巨大差异,因此应考虑将它们视为两种不同的器件。我们质疑可靠性增长率是否可以不受限制地预测。对于什么是“最佳商业实践”也应该有更清晰的说明——这是应用该模式的先决条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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