Forming PbTe on Si-substrates for IR sensors

Abstract

The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly ort 100 mm Si substrate using a barium fluoride (BaF 2 ) buffer layer. BaF 2 buffer layer was used to overcome the large lattice and thermal expansion mismatch. Structure characteristics of the PbTe films grown on silicon substrates with the BaF 2 buffer layer were investigated by x - ray phase analysis. We have fabricated PbTe on Si sensor with cutoff wavelength 5,2 μm.