{"title":"A 1 Mb 5-transistor/bit non-volatile CAM based on flash-memory technologies","authors":"T. Miwa, H. Yamada, Y. Hirota, T. Satoh, H. Hara","doi":"10.1109/ISSCC.1996.488505","DOIUrl":null,"url":null,"abstract":"A 1 Mb content-addressable memory LSI based on flash technologies (flash CAM) has memory cells consisting of a pair of flash memory cell transistors. 10.34 /spl mu/m/sup 2/ cell and 42.9mm/sup 2/ die are attained with 0.8 /spl mu/m design rules. The flash CAM can be searched for masked binary data. Read access time and search access time are 115 ns and 145 ns, respectively, with a 5 V supply voltage. Power dissipation is 200 mW at 3.3 MHz. The flash CAM cell consists of two floating-gate transistors. This structure is in strong contrast to the comparator-added-storage structure of 17-transistor SRAM-based cells or five-transistor two-capacitor of DRAM-based cells. In addition to non-volatility, flash CAMs also feature on-board programmable/erasable memory.","PeriodicalId":162539,"journal":{"name":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1996.488505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A 1 Mb content-addressable memory LSI based on flash technologies (flash CAM) has memory cells consisting of a pair of flash memory cell transistors. 10.34 /spl mu/m/sup 2/ cell and 42.9mm/sup 2/ die are attained with 0.8 /spl mu/m design rules. The flash CAM can be searched for masked binary data. Read access time and search access time are 115 ns and 145 ns, respectively, with a 5 V supply voltage. Power dissipation is 200 mW at 3.3 MHz. The flash CAM cell consists of two floating-gate transistors. This structure is in strong contrast to the comparator-added-storage structure of 17-transistor SRAM-based cells or five-transistor two-capacitor of DRAM-based cells. In addition to non-volatility, flash CAMs also feature on-board programmable/erasable memory.