Silicon carbide accumulation-mode laterally diffused MOSFET

Abstract

We present a new accumulation-mode structure for silicon carbide laterally diffused MOSFETs. Key parameters that alter the device performance have been optimized using the device simulator MINIMOS-NT. The relationship between blocking and driving capability of the structure has been analyzed. Excellent I-V characteristics with significant improvement in the reduction of the gate bias voltage has been achieved. A blocking voltage of 1460 V with a small leakage current, a considerably lower specific on resistance of 93 m/spl Omega//spl middot/cm/sup 2/ and a fairly large advantage in electrical performance and device reliability were achieved.