Impact of fine surface chemical-mechanical polishing on the manufacturing yield of 1200V SiC Schottky barrier diodes

Abstract

Unlike other techniques for surface cleaning/etching such as dry etching (RIE, ICP), the new polishing process does not degrade Schottky diode forward characteristics. Thus, apart from the promising improvement of starting material quality, fine surface polishing seems to offer significant advantages in terms of increasing manufacturing yield.