A novel low-cost horizontal current bipolar transistor (HCBT) with the reduced parasitics

Abstract

A novel horizontal current bipolar transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs, is presented. The HCBT is processed by a low-cost technology in the (111) sidewalls on the [110] wafers, with minimized volume of the extrinsic regions, resulting in reduced parasitics. The HCBT structure exhibits the highest f/sub /spl tau// (30.4 GHz) and f/sub T/BV/sub CEO/ product (127.7 GHzV) among the lateral bipolar transistors.