Accelerated Testing of Time Related Parameters in MNOS Memories

Abstract

Testing of pseudo-nonvolatile memories with finite, varying periods of unpowered retention presents unique and difficult problems to test engineers. This paper shows some accelerated methods of predicting and measuring retention and endurance characteristics that allows MNOS memory devices to be 100% tested and sorted for these critical parameters in a cost effective manner. Testing of non-volatile memories with finite non-permanent periods of unpowered retention presents unique and difficult problems to test engineers. This complex problem is further complicated by the fact that the retention characteristic is dynamic in that it changes as a function of the device write/erase history. These factors add a third and fourth dimension to the normal two dimensioned memory test problem.