Mechanistic understanding of mobility degradation on gate-last ZrO2 with medium thermal budget annealing

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839649

T. Ngai, R. Clark, D. Veksler, K. Matthews, E. Bersch, D. Gilmer, G. Bersuker, R. Hill, C. Hobbs, K. Tapily, C. Wajda, S. Consiglio, T. Burroughs, S. Vivekanand, V. Kaushik, G. Leusink, P. Kirsch

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Abstract

In this paper, we provide a mechanistic understanding of mobility degradation of gate-last ZrO2 subjected to medium thermal budget annealing. We find that high-k post deposition anneal (PDA) even at modest temperatures can improve the interfacial layer (IL) and bulk oxide, but mobility suffers. The mechanism for this mobility degradation is the enhanced remote Coulomb scattering from nonstoichiometric ZrOx region near the IL. The high-k PDA, even at moderate temperature, enables oxygen gettering of the IL and deprives oxygen from ZrO2 near the IL, which results in the accumulation of defects/traps in the region near ZrO2/IL interface. This enhances remote Coulomb scattering due to the high concentration of oxide traps and their close proximity to the conductance channel. Consequently, mobility is degraded even though IL and bulk oxide are improved.

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中热收支退火对栅极ZrO2迁移率退化机理的研究

在本文中，我们提供了一种对栅极ZrO2在中热收支退火下迁移率退化的机制理解。我们发现，即使在适当的温度下，高k沉积后退火(PDA)也可以改善界面层(IL)和大块氧化物，但影响迁移率。这种迁移率下降的机制是来自IL附近非化学量ZrOx区域的远程库仑散射增强。即使在中等温度下，高k PDA也会使IL吸氧，并剥夺IL附近ZrO2的氧气，从而导致ZrO2/IL界面附近区域的缺陷/陷阱积累。由于高浓度的氧化物陷阱和它们靠近电导通道，这增强了远程库仑散射。因此，即使IL和大块氧化物得到改善，迁移率也会降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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