RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications

2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI:10.1109/IRPS48203.2023.10118043

P. Srinivasan, J. Lestage, S. Syed, X. Hui, S. Moss, O. D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. Mckay, A. Bandyopadhyay, N. Cahoon, F. Guarín, B. Min, M. Gall, S. Ludvik

{"title":"RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications","authors":"P. Srinivasan, J. Lestage, S. Syed, X. Hui, S. Moss, O. D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. Mckay, A. Bandyopadhyay, N. Cahoon, F. Guarín, B. Min, M. Gall, S. Ludvik","doi":"10.1109/IRPS48203.2023.10118043","DOIUrl":null,"url":null,"abstract":"RF long term aging and large signal reliability in 22FDX Wi-Fi Power Amplifier (P A) designs is investigated. Packaged PA operating at 5.4GHz., 3.3V VDD with LDMOS as Common Gate and SLVT as Common Source is stressed under accelerated DC and RF power conditions for +1.5kPOH at TA=25 C. A custom built Power Amplifier Test System (PATS) tool capable of large signal on packaged samples is used for long term stress. Initial RF performance of ~26 dBm., with gain 14~15 is seen before stress. Power sweeps at regular stress intervals were performed to validate PA degradation. Self-heating effect is studied by correlating TA to junction temp TJ using thermal models. Thermal images confirm that higher Pdiss leads to higher TJ. Output power degradation of < 0.5dB is seen at accelerated voltage of 4.2V after + 1.5kPOH which is correlated to voltage swings. Key limiting mechanism for common gate and source devices are identified, demonstrating the viability of CMOS FDSOI technology for 5G applications.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10118043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

RF long term aging and large signal reliability in 22FDX Wi-Fi Power Amplifier (P A) designs is investigated. Packaged PA operating at 5.4GHz., 3.3V VDD with LDMOS as Common Gate and SLVT as Common Source is stressed under accelerated DC and RF power conditions for +1.5kPOH at TA=25 C. A custom built Power Amplifier Test System (PATS) tool capable of large signal on packaged samples is used for long term stress. Initial RF performance of ~26 dBm., with gain 14~15 is seen before stress. Power sweeps at regular stress intervals were performed to validate PA degradation. Self-heating effect is studied by correlating TA to junction temp TJ using thermal models. Thermal images confirm that higher Pdiss leads to higher TJ. Output power degradation of < 0.5dB is seen at accelerated voltage of 4.2V after + 1.5kPOH which is correlated to voltage swings. Key limiting mechanism for common gate and source devices are identified, demonstrating the viability of CMOS FDSOI technology for 5G applications.

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5G应用22FDX WiFi功率放大器设计的RF长期老化行为和可靠性

研究了22FDX Wi-Fi功率放大器设计中的射频长期老化和大信号可靠性问题。工作在5.4GHz的封装PA。在TA=25 c时，在+1.5kPOH的加速直流和射频功率条件下，以LDMOS作为共门和SLVT作为共源的3.3V VDD进行应力测试。一个定制的功率放大器测试系统(PATS)工具能够在封装样品上产生大信号，用于长期应力测试。初始射频性能为~26 dBm。，以增益14~15为见应力前。在固定的应力间隔内进行功率扫描以验证PA的降解。利用热模型将TA与结温TJ联系起来，研究了自热效应。热图像证实，更高的Pdiss导致更高的TJ。在+ 1.5kPOH后，在4.2V加速电压下，输出功率衰减< 0.5dB，这与电压波动有关。确定了通用栅极和源器件的关键限制机制，证明了CMOS FDSOI技术在5G应用中的可行性。

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2023 IEEE International Reliability Physics Symposium (IRPS)

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