Ultra-Wide Bandgap Semiconductor Transistors for mm-wave Applications

Abstract

This presentation will give an overview of the current status and future opportunities for high-frequency ultrawide bandgap (UWBG) semiconductor transistors. GaN-based transistors have demonstrated excellent performance for RF applications, but are close to the limits set by their electronic properties in the mm-wave regime. UWBG semiconductors such as high Al-content AlGaN can provide significantly higher breakdown electric field while having electron saturated velocity similar to GaN, and can in principle provide significant improvements in power-gain product at mm-wave frequencies. However, key challenges in real devices such as high contact resistance, premature breakdown of metal-semiconductor and dielectric interfaces, and thermal management must be addressed before such improved performance is realized.