Investigating MLC variation of filamentary and non-filamentary RRAM

Abstract

Distinct statistical differences between the HBM non-filamentary RRAM and popular filamentary RRAM are highlighted in this study. The HBM RRAM features little cycle-to-cycle variation on both resistance and SET/RESET time, which enlarges the design window of MLC operation. A reliable four-level MLC operation have been demonstrated in the HBM device, suggesting its great potential for high-density data storage applications.