{"title":"The process variability of a V-band LC-VCO in 65nm SOI CMOS","authors":"D.D. Kim, Jonghae Kim, Choongyeun Cho","doi":"10.1109/RFIC.2008.4561401","DOIUrl":null,"url":null,"abstract":"The process variability of a V-band LC-VCO implemented in 65 nm SOI CMOS is examined. A complementary LC-VCO design, test set up, and measurements are presented. One lot of 300 mm wafers are measured for statistics. There are 8 wafers in the lot, and 67 VCOs per wafer. The VCO frequency tuning range statistics, analog variability against digital benchmark, yield estimation, and intra- vs. inter-wafer variations are analyzed and discussed. The VCO average frequency tuning is 63.7-69.6 GHz, and it shows 90% yield from 65.1 to 67.9 GHz.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The process variability of a V-band LC-VCO implemented in 65 nm SOI CMOS is examined. A complementary LC-VCO design, test set up, and measurements are presented. One lot of 300 mm wafers are measured for statistics. There are 8 wafers in the lot, and 67 VCOs per wafer. The VCO frequency tuning range statistics, analog variability against digital benchmark, yield estimation, and intra- vs. inter-wafer variations are analyzed and discussed. The VCO average frequency tuning is 63.7-69.6 GHz, and it shows 90% yield from 65.1 to 67.9 GHz.