Low Temperature Growth of High Quality Crystal of Anatase Based-TiO2 Thin Film Grown Using Double Zone CVD Technique

Abstract

Titanium dioxide (TiO2) structure was successfully synthesized by the double zone chemical vapor deposition (CVD) technique. Titanium butoxide was used as precursor deposited at of 206 °C under different substrate temperatures ranging from 60°C to 80°C. The TiO2 film was growth onto glass substrates and the annealing temperature was kept at 500 °C for 1 hour. The films were investigated by XRD. The TiO2 films show good crystallinity without any impurity at (101) peak orientation with small FWHM anatase phase. It also was found that the surface morphology of the TiO2 at deposited at 60 °C show a homogeneous structure. The roughness of the TiO2 film was measured by AFM. The lower roughness is a film deposited at °C 60. The thickness of TiO2 film was measured by the surface profiler. By increase temperature on substrate temperature, TiO2 film thickness also increases. The resistivity has been measured using the 4-point probe and the lower resistivity found at 60 °C.