Strain-induced morphological instability and self assembly of tin wires during controlled annealing of Ge0.83Sn0.17 epitaxial film on Ge(001) substrate

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874671

Lingzi Li, Wei Wang, E. Tok, Y. Yeo

引用次数: 0

Abstract

Formation of Sn wires on Ge_0.83Sn_0.17 layer during annealing was discovered. The phenomenon observed may be explained by surface undulation, Sn segregation and aggregation.

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Ge(001)衬底上Ge0.83Sn0.17外延薄膜控制退火过程中锡丝的形变不稳定性和自组装

在退火过程中，发现在Ge0.83Sn0.17层上形成Sn丝。观察到的现象可以用表面波动、锡的偏析和聚集来解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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