Development of narrowband modified uni-travelling-carrier photodiodes with high power efficiency

Abstract

Narrowband high-power photodiodes (PDs) are promising candidates for analog photonic systems including RF antenna transmitter applications and low phase noise photonic oscillators. Our previous work has demonstrated that wideband modified uni-travelling-carrier (MUTC) PDs with cliff layer [1] can achieve high power at high frequency and that their performance can be further enhanced by flip-chip bonding on high thermal conductivity AlN substrates[2,3]. Here we present our recent work on developing narrowband MUTC-PDs to improve power efficiency (ηρ) and AC Responsivity (RAC).