A two-stage cascode class F CMOS power amplifier for Bluetooth

Abstract

In this paper, a two-stage cascode class F power amplifier (PA) intended for class 1 Bluetooth application is presented using standard 0.18-μm CMOS technology. In the proposed PA, a cascode schematic is used not only to avoid from overflow current but also to have a good isolation. Furthermore, the class F power amplifier is designed to improve the power efficiency using the operating mode in either triode or cut-off region. The simulation results present that the output power is larger than 20 dBm and the power added efficiency (PAE) is roughly 49%. Moreover, the multiple bonding wires are added to eliminate the parasitic capacitance of input stage (first) and to save the power dissipation.