On the applicability of two-bit carbon nanotube through-silicon via for power distribution networks in 3-D integrated circuits

Abstract

This study investigates the possibility of the carbon nanotube (CNT) ‐ based through ‐ silicon vias (TSVs) for improving power integrity of 3 ‐ D integrated circuits (3 ‐ D ICs). The circuit model is developed for 2 ‐ bit CNT TSV and validated through the full ‐ wave electromagnetic simulator HFSS simulations. The 2 ‐ bit CNT TSV is applied to power distribution networks (PDNs) by combining the validated equivalent ‐ circuit model and that TSV ‐ based PDN impedance is compared with the traditional one. By virtue of the large capacitance and low inductance of the 2 ‐ bit CNT TSV, the PDN impedance of the 3 ‐ D IC can be suppressed significantly and the anti ‐ resonant frequency can be increased.