A Global Self-Heating Model for Device Simulation

Abstract

For the design and simulation of many state-of-the-art devices self-heating effects must be considered. This is a very difficult task as thermal effects are basically threedimensional effects which can not as easily be reduced to two-dimensions as it is possible for many purely electrical problems. Furthermore, the thermal active volume is much larger than the electrical area and the thermal boundary conditions are difficult to measure. We propose a global self-heating model which is capable of accurate consideration of thermal effects and is because of its computational efficiency and robustness sometimes even better suited for some problems than the solution of the standard lattice