{"title":"Membrane multichip module technology on silicon","authors":"W. Cheng, M.A. Beiley, S.S. Wong","doi":"10.1109/MCMC.1993.302149","DOIUrl":null,"url":null,"abstract":"A membrane multichip module fabricated on a silicon substrate by utilizing conventional IC processing techniques is discussed. A chip attachment technology to make electrical connections between the wires on a chip and those on the substrate in the membrane area is described. The contacts between the chips and the module are defined by conventional IC photolithography and formed by metal deposition so that they can be very small and dense. The contacts can be located anywhere over an entire chip and not limited just to the edges. The strong bonding of polyimide can ensure the reliability of the modules. The resistance of 10*10- mu m/sup 2/ and 20*20- mu m/sup 2/ contacts is 0.060 Omega /contact and 0.024 Omega /contact, respectively. Multiple-layers of metals are embedded into the membrane to increase the flexibility of routing between chips.<<ETX>>","PeriodicalId":143140,"journal":{"name":"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93","volume":"295 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCMC.1993.302149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A membrane multichip module fabricated on a silicon substrate by utilizing conventional IC processing techniques is discussed. A chip attachment technology to make electrical connections between the wires on a chip and those on the substrate in the membrane area is described. The contacts between the chips and the module are defined by conventional IC photolithography and formed by metal deposition so that they can be very small and dense. The contacts can be located anywhere over an entire chip and not limited just to the edges. The strong bonding of polyimide can ensure the reliability of the modules. The resistance of 10*10- mu m/sup 2/ and 20*20- mu m/sup 2/ contacts is 0.060 Omega /contact and 0.024 Omega /contact, respectively. Multiple-layers of metals are embedded into the membrane to increase the flexibility of routing between chips.<>