Membrane multichip module technology on silicon

W. Cheng, M.A. Beiley, S.S. Wong
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引用次数: 8

Abstract

A membrane multichip module fabricated on a silicon substrate by utilizing conventional IC processing techniques is discussed. A chip attachment technology to make electrical connections between the wires on a chip and those on the substrate in the membrane area is described. The contacts between the chips and the module are defined by conventional IC photolithography and formed by metal deposition so that they can be very small and dense. The contacts can be located anywhere over an entire chip and not limited just to the edges. The strong bonding of polyimide can ensure the reliability of the modules. The resistance of 10*10- mu m/sup 2/ and 20*20- mu m/sup 2/ contacts is 0.060 Omega /contact and 0.024 Omega /contact, respectively. Multiple-layers of metals are embedded into the membrane to increase the flexibility of routing between chips.<>
硅膜多芯片模块技术
讨论了一种利用传统集成电路加工技术在硅衬底上制备的膜多芯片模块。描述了一种芯片连接技术,用于在芯片上的导线与薄膜区域的基板上的导线之间进行电连接。芯片和模块之间的接触由传统的IC光刻定义,并通过金属沉积形成,因此它们可以非常小而致密。触点可以位于整个芯片的任何位置,而不仅仅局限于边缘。聚酰亚胺的强粘合保证了组件的可靠性。10*10- μ m/sup 2/和20*20- μ m/sup 2/触点的电阻分别为0.060 ω /触点和0.024 ω /触点。多层金属嵌入到薄膜中,以增加芯片之间路由的灵活性。
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