High speed non-linear device characterization and uniformity investigations at X-band frequencies exploiting behavioral models

R. Saini, J. Bell, T. Canning, S. Woodington, D. Fitzpatrick, J. Lees, J. Benedikt, P. Tasker
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引用次数: 4

Abstract

This paper outlines a non-linear measurement approach suitable for wafer mapping and technology screening applications. It is shown how rapid characterization and uniformity investigations of non-linear devices is possible through the development of an intelligence driven, open-loop active harmonic load pull measurement system, where localized behavioral models are exploited to dramatically improve measurement system speed and to improve utilization efficiency. The load pull measurement results obtained were then used to extract 5th order behavioral models for robust CAD integration. Device variations can now be included within the CAD tool. Technique demonstration involved the measurements of 10×75 μm GaAs pHEMT devices, operating at 9 GHz, biased in Class-AB on four different wafers. An example CAD investigation comparing the variation of the measured and modeled current and voltage waveforms is discussed.
高速非线性器件特性和均匀性研究在x波段频率利用行为模型
本文概述了一种适用于晶圆映射和技术筛选应用的非线性测量方法。通过开发智能驱动的开环有源谐波负载拉测量系统,可以实现非线性设备的快速表征和均匀性研究,其中利用局部行为模型可以显着提高测量系统的速度并提高利用效率。然后将得到的载荷拉力测量结果用于提取五阶行为模型,实现鲁棒CAD集成。设备变化现在可以包含在CAD工具中。技术演示包括测量10×75 μm GaAs pHEMT器件,工作在9 GHz,偏置在ab类,在四个不同的晶圆上。讨论了一个实例CAD研究,比较了测量和模拟的电流和电压波形的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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