Stochastic inductance model of on chip active inductor

R. Banchuin, R. Chaisricharoen
{"title":"Stochastic inductance model of on chip active inductor","authors":"R. Banchuin, R. Chaisricharoen","doi":"10.1109/ICETC.2010.5529957","DOIUrl":null,"url":null,"abstract":"In this study, the model which describes the effect of the stochastic nature of the bias current to the inductance of the on chip active inductor has been proposed. This study has been performed based on the up to dated CMOS technology. For the model derivation and verification, the fundamental concept of stochastic process and goodness of fit test have been adopted respectively. The model can accurately capture the stochastic behavior of the resulting inductance with sufficient confidence i.e. 95% with the K-S test. The proposed model is applicable to any CMOS on chip active inductor. Hence, it has been found to be a convenience tool for the design of various active inductor based communication circuits and systems as its aim.","PeriodicalId":299461,"journal":{"name":"2010 2nd International Conference on Education Technology and Computer","volume":"08 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 2nd International Conference on Education Technology and Computer","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICETC.2010.5529957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

In this study, the model which describes the effect of the stochastic nature of the bias current to the inductance of the on chip active inductor has been proposed. This study has been performed based on the up to dated CMOS technology. For the model derivation and verification, the fundamental concept of stochastic process and goodness of fit test have been adopted respectively. The model can accurately capture the stochastic behavior of the resulting inductance with sufficient confidence i.e. 95% with the K-S test. The proposed model is applicable to any CMOS on chip active inductor. Hence, it has been found to be a convenience tool for the design of various active inductor based communication circuits and systems as its aim.
片上有源电感的随机电感模型
在本研究中,提出了一个描述偏置电流随机性对片上有源电感电感的影响的模型。这项研究是基于最新的CMOS技术进行的。对于模型的推导和验证,分别采用了随机过程的基本概念和拟合优度检验。通过K-S检验,该模型可以准确地捕获产生的电感的随机行为,具有足够的置信度,即95%。该模型适用于任何CMOS片上有源电感。因此,它已被发现是一个方便的工具,设计各种有源电感为基础的通信电路和系统的目的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信