A 1.65-V 176-μW 104-dB Continuous Time Delta-Sigma Modulator for Sensor Applications

Xiaofei Chen, Yubin Zhao, Yuxiang Tang, Shuang-Xi Lin
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Abstract

This paper presents a low-noise single-loop third-order single-bit continuous-time (CT) Delta-Sigma modulator for sensor applications. The modulator employs the CIFF-B structure and chopping technique to reduce the power consumption and low-frequency noise. The FIR feedback DAC is adopted to reduce the sensitivity of CT ΔΣ modulators to clock jitter, and the method of moments is used to design the coefficients of loop filter. The chopping frequency is also designed carefully to avoid the noise aliasing effect, and modulator coefficients and circuit implementation have been optimized for low power. The modulator, implemented in a 150nm CMOS technology with a core area of 0.48mm 2, achieves a 107dB peak SNR and a 104dB peak SNDR over a 1kHz signal bandwidth. The power consumption is 176µW at 1.65V supply voltage.
用于传感器应用的1.65 v 176 μ w 104 db连续时间Delta-Sigma调制器
本文提出了一种用于传感器的低噪声单回路三阶单比特连续时间(CT) Delta-Sigma调制器。该调制器采用CIFF-B结构和斩波技术,降低了功耗和低频噪声。采用FIR反馈DAC降低CT ΔΣ调制器对时钟抖动的灵敏度,采用矩量法设计环路滤波器系数。为了避免噪声混叠效应,对斩波频率进行了精心设计,并对调制器系数和电路实现进行了低功耗优化。该调制器采用150nm CMOS技术,核心面积为0.48 mm2,在1kHz信号带宽下可实现107dB峰值信噪比和104dB峰值信噪比。电源电压为1.65V时,功耗为176µW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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