A 125MHz burst mode 0.18/spl mu/m 128Mbit 2 bits per cell flash memory

2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302) Pub Date : 2002-06-13 DOI:10.1109/VLSIC.2002.1015111

H. Castro, K. Augustine, S. Balasubrahmanyam, T. Bressie, S. Chandramouli, G. Christensen, M. Dayley, D. Elmhurst, K. Fan, M. Goldman, C. Haid, R. Haque, M. Ishac, M. Khandaker, J. Kreifels, B. Li, K. Loe, T. Ly, F. Marvin, R. Melcher, S. Monasa, R. Nambiar, Q. Ngo, R. Padilla, B. Pathak, A. Rahman, R. Rajagopal, K. Ramamurthi, S.S. Saini, A. Sayed, I. Sharif, B. Srinivasan, M. Szwarc, G. Vadlamudi, V. Viajedor, R. Zeng

引用次数: 6

Abstract

We describe the design of a high performance 2 bits per cell flash memory device capable of 8ns synchronous access rate capable of operation at up to 125MHz in burst mode and asynchronous page mode access rate of 14ns. The device is fabricated on Intel's 0.18/spl mu/m ETOX/spl trade/ VII Process technology.

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一种125MHz突发模式0.18/spl mu/m 128Mbit / cell 2位闪存

我们设计了一种高性能的2位/单元闪存器件，具有8ns的同步访问速率，能够在高达125MHz的突发模式下工作，异步页面模式访问速率为14ns。该器件采用英特尔的0.18/spl μ /m ETOX/spl trade/ VII工艺技术制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)

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