A dynamic threshold-voltage SOI MOSFET with a stepped channel doping profile

Abstract

A novel dynamic threshold voltage SOI MOS structure with a stepped-channel-doping (SCD) profile is proposed. The influence of the SCD profile on performance of deep-submicron dynamic threshold SOI MOSFET's is studied systematically using two-dimensional device simulation. It is discovered that the SCD configuration combined with the dynamic threshold SOI MOS structure not only effectively suppresses short-channel effects, but also greatly enhances the device driving capability. Moreover, the heavily doped body in the SCD device substantially reduces the forward-biased body current and source-drain punch-through current.