In-line control of material properties of SiOC:H based low-k dielectrics utilizing optical metrology

Abstract

Manufacturing process control of porous SiOC:H low-k dielectrics is challenging due to their hybrid nature and process damage vulnerability. We discuss advanced optical modeling of various low-k dielectrics that allows one to reflect their material properties and improves accuracy and precision of scatterometry models widely utilized in manufacturing process control. Furthermore, we explore usage of optical material model data for investigating UV-curing and deposition chamber signatures as well as variety of process damage that requires strict control.