Simulation of the premature breakdown of the planar p-n junction at the avalanch multiplication of carriers in silicon

Abstract

It was shown with the use of 2D-simulation of the model diodes, that the premature breakdown caused by the positive charge build in the oxide may be initiated at least by two factors — the punch-through and/or the premature avalanch multiplication of carriers near the surface of the device. At given voltage and given oxide charge the simple design rule may be fomulated — the distance in the planar plain between electrode and the junction line must be grater than the punch-through length.