Development of ultra-violet sensing devices with zinc-oxide thin-films on oxidized nano-porous-silicon substrates

K. Wu, C. Tang, Sheng-Chun Lin
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Abstract

This paper demonstrated the deposition of zinc oxide (ZnO) thin films on oxidized nano-porous-Si (ONPS) substrates. Ultra-violet (UV) sensing devices based on the developed ZnO films had been fabricated and exhibited high photo-responsivity for 300~400-nm incident UV light. The ZnO-on-ONPS devices got a large photo-to-dark current ratio up to 104 at an incident wavelength of 375 nm, indicating their high potential for development of low-cost UV photodetectors.
氧化纳米多孔硅基片上氧化锌薄膜紫外传感器件的研制
研究了在氧化纳米多孔硅(ONPS)衬底上沉积氧化锌(ZnO)薄膜的方法。制备了基于ZnO薄膜的紫外传感器件,对300~400 nm入射紫外光具有较高的光响应性。在375 nm入射波长下,ZnO-on-ONPS器件的光暗比高达104,表明其具有开发低成本紫外光电探测器的巨大潜力。
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