Uses of corona oxide silicon (COS) measurements for diffusion process monitoring and troubleshooting

R.G. Cosway, K.B. Catmull, J. Shray, R. Naujokaitis, M. Peters, D. Grant, G. Horner, B. Letherer
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引用次数: 1

Abstract

The dynamic nature of modern semiconductor fabrication facilities requires metrology tools that can be used to diagnose infrequent problems. However, due to the high cost of clean room floor space, these tools should also provide routine monitoring capability and be able to diagnose numerous issues. For a diffusion area, the corona oxide silicon (COS) measurement technique lends itself well to double duty as both an engineering and production tool.
使用电晕氧化物硅(COS)测量扩散过程监测和故障排除
现代半导体制造设备的动态特性要求计量工具可以用来诊断不常见的问题。然而,由于洁净室占地面积的高成本,这些工具还应提供常规监测能力,并能够诊断许多问题。对于扩散领域,电晕氧化硅(COS)测量技术可以很好地发挥工程和生产工具的双重作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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