Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices

Abstract

Recently, several experimental groups have found correlations in gate and drain current fluctuations. In this paper, by studying single trap activated leakage paths, both evidence and a refined 4-state defect model are provided, ascribing additional gate tunneling current in nm-FETs to thermally activated defect states. The model is capable of explaining both positive and negative correlations in gate and drain current RTN, but also the mostly uncorrelated nature of these drain and gate RTN signals.