Numerical simulation of GaN HEMTs with local doping barrier layer

Abstract

GaN HEMT with local doping barrier layer is proposed in this paper. The DC and RF characteristics are analyzed by using 2D numerical simulation. The results show that the breakdown voltage is 25% larger than that of the conventional structure due to the extension of depleted layer width between gate and drain electrodes. A theoretical maximum output power density of 14.6W/mm has been achieved, which is ~34% larger than conventional structure. And the RF simulation results show that the proposed GaN HEMT also improved the maximum stable gain by 1dB up to 70GHz due to the decrease of the gate-drain capacitance.