An integrated 10A, 2.2ns rise-time laser-diode driver for LIDAR applications

M. Wens, Jean-Michel Redouté, Tim Blanchaert, Nicolas Bleyaert, M. Steyaert
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引用次数: 18

Abstract

An integrated laser-diode driver for LIDAR applications in a 0.35 µm 80V CMOS technology is realized. The integration of the power switch as a n-DMOS allows a peak current of 10 A, with a corresponding rise-time of 2.2 ns and a fall-time of 2.4 ns. Up to the authors knowledge this is a first-time achievement on a monolithic die. The laser can be operated at a maximum duty-cycle of 0.1 %, with a pulse duration of 10 – 50 ns. To overcome the parasitic inductances and their associated voltage drop, a high voltage of 70 V is applied to the LIDAR circuit. In order to drive the power switch within its safe operating area and to make sure the rise- and fall-time is minimized, a pre-driver is integrated on the same die.
用于激光雷达应用的集成10A, 2.2ns上升时间激光二极管驱动器
在0.35µm 80V CMOS技术上实现了激光雷达应用的集成激光二极管驱动器。作为n-DMOS的电源开关集成允许峰值电流为10a,相应的上升时间为2.2 ns,下降时间为2.4 ns。据作者所知,这是第一次在单片芯片上取得成就。激光器可以在0.1%的最大占空比下工作,脉冲持续时间为10 - 50ns。为了克服寄生电感及其相关的电压降,在激光雷达电路中施加了70 V的高压。为了驱动电源开关在其安全工作区域内,并确保最大限度地减少上升和下降时间,在同一模具上集成了预驱动器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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