1/f Noise Modeling in a-Si TFTs by BSIM Software

Abstract

1/f noise has been studied in amorphous silicon inverted staggered thin film transistors over different gate geometries. It is shown that the origin of this noise changes when the gate area is scaled down. For large gate geometries mobility fluctuations (Hooge model) prevail whereas for small gate dimensions correlated number-mobility fluctuations (∆N-∆μ model) are involved. In any case, we have used BSIM to obtain 1/f noise modeling. It is pointed out some terms in order to obtain simulation accuracy. Good agreement is observed showing BSIM possibilities to model excess noise in thin film devices.