{"title":"Spectroscopic Anisotropy Micro-Ellipsometry (SAME) for determination of lateral and vertical dimensions of sub-micron lithographic structures","authors":"A. Michaelis, O. Gent, U. Mantz","doi":"10.1109/VTSA.1999.786018","DOIUrl":null,"url":null,"abstract":"A new metrology tool, Spectroscopic Anisotropy Micro-Ellipsometry (SAME) is introduced. The method allows for a rapid and precise measurement of lateral and vertical feature sizes of periodic structures showing form birefringence. Examples of CD (critical dimensions), taper angle as well as overlay rotation measurements for gigabit generation DRAM structures are presented.","PeriodicalId":237214,"journal":{"name":"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.1999.786018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new metrology tool, Spectroscopic Anisotropy Micro-Ellipsometry (SAME) is introduced. The method allows for a rapid and precise measurement of lateral and vertical feature sizes of periodic structures showing form birefringence. Examples of CD (critical dimensions), taper angle as well as overlay rotation measurements for gigabit generation DRAM structures are presented.