{"title":"Schottky diode rectifier for power harvesting application","authors":"Yuwei Zhou, B. Froppier, T. Razban","doi":"10.1109/RFID-TA.2012.6404561","DOIUrl":null,"url":null,"abstract":"This paper presents a study of rectifier prototype and diode modelization. The rectifying circuit with single Schottky diode HSMS-2860 at 2.45 GHz is proposed for energy harvesting applications. In such applications, the input power is very low, mainly about -20 dBm. Based on an analysis of matching circuit, the rectifiers with single stub matching circuit, with radial stubs low pass filter, or with compact structure were designed by using circuit simulation and co-simulation in ADS. The output DC voltages of 36.2 mV and the conversion efficiency of 1.3% were measured over a load resistance of 10 kΩ for -20 dBm microwave incident power.","PeriodicalId":232862,"journal":{"name":"2012 IEEE International Conference on RFID-Technologies and Applications (RFID-TA)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on RFID-Technologies and Applications (RFID-TA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFID-TA.2012.6404561","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
This paper presents a study of rectifier prototype and diode modelization. The rectifying circuit with single Schottky diode HSMS-2860 at 2.45 GHz is proposed for energy harvesting applications. In such applications, the input power is very low, mainly about -20 dBm. Based on an analysis of matching circuit, the rectifiers with single stub matching circuit, with radial stubs low pass filter, or with compact structure were designed by using circuit simulation and co-simulation in ADS. The output DC voltages of 36.2 mV and the conversion efficiency of 1.3% were measured over a load resistance of 10 kΩ for -20 dBm microwave incident power.