Self-aligned recessed source/drain ultra-thin body SOI MOSFET technology

Abstract

In this work, a self-aligned recessed source/drain (ReS/D) ultra-thin body (UTB) SOI MOS technology is proposed and demonstrated. The thick diffusion regions of the ReS/D are placed on a recessed trench, which is patterned on the buried oxide and go under the SOI film. The new structure reduces the parasitic source/drain resistance without increasing the gate-to-drain Miller capacitance, which is the major advantage over the elevated source/drain structure. The scalability of the UTB MOSFETs and the larger design window due to reduced parasitics are demonstrated. Fabrication details and experimental results are presented.