An advanced structural deep-submicron MOS device

Abstract

An advanced structural deep sub-micron MOS device was presented and fabricated based on conventional photolithography equipment and novel side-wall technique. The effective channel length of 0.2 /spl mu/m could be reached. The transconductances of the optimized devices were 125 and 80 mS/mm for n-MOSFET and p-MOSFET respectively. The breakthrough voltages were 10 and 11 volt respectively for n-MOSFET and p-MOSFET.