M. Abdallah, E. Dubaric, H. Nilsson, C. Fröjdh, C. Petersson
{"title":"A scintillator-coated phototransistor pixel sensor with dark current cancellation","authors":"M. Abdallah, E. Dubaric, H. Nilsson, C. Fröjdh, C. Petersson","doi":"10.1109/ICECS.2001.957563","DOIUrl":null,"url":null,"abstract":"An investigation of a prototype integrating phototransistor-based CMOS Active Pixel Sensor (APS) circuit coated with scintillating material for intra-oral dental X-ray imaging is presented. Cancellation of the leakage current using a dummy phototransistor technique was tested and proved efficient. Measured results showed a minimal dark current whose value is in the photodiodes ranges. The low values of the leakage current that was achieved together with the low X-ray direct absorption results in a high input dynamic range which, in addition to its high optical sensitivity, makes the phototransistor an excellent candidate to replace the presently dominating CCD systems.","PeriodicalId":141392,"journal":{"name":"ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.01EX483)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.01EX483)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2001.957563","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
An investigation of a prototype integrating phototransistor-based CMOS Active Pixel Sensor (APS) circuit coated with scintillating material for intra-oral dental X-ray imaging is presented. Cancellation of the leakage current using a dummy phototransistor technique was tested and proved efficient. Measured results showed a minimal dark current whose value is in the photodiodes ranges. The low values of the leakage current that was achieved together with the low X-ray direct absorption results in a high input dynamic range which, in addition to its high optical sensitivity, makes the phototransistor an excellent candidate to replace the presently dominating CCD systems.