Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base

Abstract

The current mechanisms through 8 nm thermal oxide have been studied by integrating the MOS capacitor at the emitter-base junction in a bipolar NPN structure. The separation of the electron and hole flow into a collector and base current, respectively, enhances the possibility of identifying the origin of currents in MOS structures in general. Here, the temperature dependence of the generated charge carriers in relation to the tunneling current for both bias polarities on the gate has been measured. It is demonstrated that the anode hole injection concept can be excluded as the dominant current mechanism.