Numerical simulation of DC characteristic of InP/InGaAs based optically controlled HEMT

Abstract

A new analytical formula of DC characteristics is presented. It shows excellent agreement with experimental data. For the conditions of V/sub /spl psi//=1.4 V and V/sub r/=1.0 V, the channel conductance g/sub d/ is 3.09/spl times/10/sup -2/ mS/mm, the transconductance g/sub m/ is 22.2 mS/mm, and the cut-off frequency f/sub T/ is 16.3 GHz. The mechanism of optically controlled HEMT is explored. Under stable illumination, it shows good agreement with experimental data. The optical responsivity of HEMT is up to 11.4 A/W.