{"title":"INTERACTION AND DYNAMICS OF TOPOLOGICAL DEFECTS IN THE DOMAIN STRUCTURE OF A TWISTED NEMATIC","authors":"V. Delev","doi":"10.31040/2222-8349-2023-0-1-5-12","DOIUrl":null,"url":null,"abstract":"The dynamics and interaction of topological defects in the domain structure of π/2 twisted nematic liquid crystal are studied. A feature of Williams domains in twisted nematics is that hydrodynamic flows in them, along with the tangential velocity component, also have an axial component, the direction of which is opposite in neighboring domains. The axial velocity component arises as a result of the strong coupling between the initial twisted director orientation n and the hydrodynamic flow velocity. In domain structures of π/2 twisted nematics, as well as in planar oriented ones, edge dislocations with topological charges S =±1 arise. With increasing applied voltage density of dislocations grows. Dislocations move both along the Williams domains ( climb ) and perpendicular to them ( glide ). At a certain rate of the increasing applied voltage U > U c, distortions of the domain structure begin to propagate on both sides of the defect core. This leads to the formation of a special topological defects - dislocations with a “diffused” core, or linear defects, which are oriented perpendicular to the Williams domains and move mainly along them. The arising linear defect has the same topological charge as the initial dislocation. It is shown that their interaction is qualitatively well described by the perturbed sine-Gordon equation.","PeriodicalId":220280,"journal":{"name":"Izvestia Ufimskogo Nauchnogo Tsentra RAN","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Izvestia Ufimskogo Nauchnogo Tsentra RAN","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31040/2222-8349-2023-0-1-5-12","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The dynamics and interaction of topological defects in the domain structure of π/2 twisted nematic liquid crystal are studied. A feature of Williams domains in twisted nematics is that hydrodynamic flows in them, along with the tangential velocity component, also have an axial component, the direction of which is opposite in neighboring domains. The axial velocity component arises as a result of the strong coupling between the initial twisted director orientation n and the hydrodynamic flow velocity. In domain structures of π/2 twisted nematics, as well as in planar oriented ones, edge dislocations with topological charges S =±1 arise. With increasing applied voltage density of dislocations grows. Dislocations move both along the Williams domains ( climb ) and perpendicular to them ( glide ). At a certain rate of the increasing applied voltage U > U c, distortions of the domain structure begin to propagate on both sides of the defect core. This leads to the formation of a special topological defects - dislocations with a “diffused” core, or linear defects, which are oriented perpendicular to the Williams domains and move mainly along them. The arising linear defect has the same topological charge as the initial dislocation. It is shown that their interaction is qualitatively well described by the perturbed sine-Gordon equation.
研究了π/2扭向列液晶畴结构中拓扑缺陷的动力学和相互作用。扭曲向列图中的Williams域的一个特征是,其中的流体动力流动,连同切向速度分量,也有一个轴向分量,其方向在邻近的域中是相反的。轴向速度分量的产生是由于初始扭转方向n与流体动力速度之间的强耦合。在π/2扭曲向列的畴结构中,以及在平面取向的畴结构中,出现了拓扑电荷S =±1的边缘位错。随着外加电压的增加,位错密度增大。位错沿威廉斯域移动(爬升)和垂直于威廉斯域移动(滑动)。当外加电压U > U c增加到一定速率时,畴结构的畸变开始在缺陷芯的两侧传播。这导致形成了一种特殊的拓扑缺陷——具有“扩散”核心的位错,或线性缺陷,其方向垂直于威廉姆斯畴,并主要沿着它们移动。产生的线状缺陷具有与初始位错相同的拓扑电荷。用摄动正弦-戈登方程定性地描述了它们的相互作用。