M. Abouzied, Hattem Osman, A. Mohieldin, A. Emira, A. Soliman
{"title":"An integrated SAW-less narrowband RF front-end","authors":"M. Abouzied, Hattem Osman, A. Mohieldin, A. Emira, A. Soliman","doi":"10.1109/MWSCAS.2010.5548913","DOIUrl":null,"url":null,"abstract":"In this paper an integrated SAW-less narrowband RF front-end for direct conversion wireless receivers is presented. The analysis of the feedback system shows a shift of the center frequency fRX for the overall RF bandpass filter from its nominal value fLO. The proposed architecture incorporates a notch filter at 2fLO to insure that there is no shift in fRX. The design has been implemented in 65nm CMOS process. It consumes 44mA from a single 1.2V supply. Simulation results show a rejection of more than 15dB in a bandwidth of +/−500MHz around 2GHz due to the additional feedback loop. The theoretical and simulation results are in close agreement.","PeriodicalId":245322,"journal":{"name":"2010 53rd IEEE International Midwest Symposium on Circuits and Systems","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 53rd IEEE International Midwest Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2010.5548913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In this paper an integrated SAW-less narrowband RF front-end for direct conversion wireless receivers is presented. The analysis of the feedback system shows a shift of the center frequency fRX for the overall RF bandpass filter from its nominal value fLO. The proposed architecture incorporates a notch filter at 2fLO to insure that there is no shift in fRX. The design has been implemented in 65nm CMOS process. It consumes 44mA from a single 1.2V supply. Simulation results show a rejection of more than 15dB in a bandwidth of +/−500MHz around 2GHz due to the additional feedback loop. The theoretical and simulation results are in close agreement.